31.080 - Semiconductor devices
ICS 31.080 Details
Semiconductor devices
Halbleiterbauelemente
Dispositifs a semi-conducteurs
Polprevodniški elementi
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This part of IEC 63287 gives guidelines for the development of reliability qualification plans
using the concept of mission profile, based on the environmental conditioning and proposed
usage of the product. This document is not intended for military- and space-related applications.
- Standard18 pagesEnglish languagesale 10% offe-Library read for1 day
This part of IEC 63287 gives guidelines for the development of reliability qualification plans using the concept of mission profile, based on the environmental conditioning and proposed usage of the product. This document is not intended for military- and space-related applications.
- Standard18 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 63287-2:2023 gives guidelines for the development of reliability qualification plans using the concept of mission profile, based on the environmental conditioning and proposed usage of the product. This document is not intended for military- and space-related applications.
- Standard30 pagesEnglish and French languagesale 15% off
IEC 60747-5-16:2023 specifies the measuring method of flat-band voltage of single GaN-based light emitting diode (LED) die or package without phosphor, based on the photocurrent (PC) spectroscopy. White LEDs for lighting applications are out of the scope of this part of IEC 60747.
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IEC 60747-18-4:2023(E) specifies the evaluation method for noise characteristics of lens-free CMOS photonic array sensors. This document includes the measurement setup, test procedure, test items, evaluation method, and test report for noise characteristics of lens-free CMOS photonic array sensors.
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IEC 60747-18-5:2023(E) specifies the evaluation method for light responsivity characteristics of lens-free CMOS photonic array sensor package modules by incident angle of light. This document includes the test setup, test procedure, test item, and test report for lens-free CMOS photonic array sensor package modules.
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This part of IEC 60700 specifies the service conditions, the definitions of essential ratings and characteristics of thyristor valves utilized in line commutated converters with three-phase bridge connections to realize the conversion from AC to DC and vice versa for high voltage direct current (HVDC) power transmission applications. It is applicable for air insulated, liquid cooled and indoor thyristor valves.
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This part of IEC 63364-1 provides terms, test method, and report of sound variation detection system based on IoT. It provides the evaluation method for each part of the sound variation detection system based on IoT in the block diagram, the characterization parameters, symbols, test setups and the conditions. In addition, this document defines the configuration items and criteria of standard space and firing situation for the quality evaluation measurement of sound field variation detection system with IoT.
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This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.
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This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit limiters.
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This part of IEC 63364-1 provides terms, test method, and report of sound variation detection system based on IoT. It provides the evaluation method for each part of the sound variation detection system based on IoT in the block diagram, the characterization parameters, symbols, test setups and the conditions. In addition, this document defines the configuration items and criteria of standard space and firing situation for the quality evaluation measurement of sound field variation detection system with IoT.
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IEC 62951-8:2023 (E) defines terms and specifies the test method for evaluating the stretchability, flexibility, and stability of flexible resistive memory. The test method descriptions include experimental procedures and the equipment to be used. It also includes general requirements for test conditions such as the temperature and relative humidity of the testing environment. The test method described in this document focuses on stability evaluation rather than reliability.
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This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit limiters.
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This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.
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This part of IEC 63203-801 specifies the ultra-low power physical layer (PHY) Smart BAN.
As the use of wearables and connected body sensor devices grows rapidly in the Internet of Things (IoT), Wireless Body Area Networks (BAN) facilitate the sharing of data in smart environments such as smart homes, smart life etc. In specific areas of digital healthcare, wireless connectivity between the edge computing device or hub coordinator and the sensing nodes requires a standardized communication interface and protocols.
The present document describes the Physical Layer (PHY) specifications:
- packet formats;
- modulation;
- forward error correction
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IEC 63203-402-1:2022 specifies test methods for wearable glove-type motion sensors to measure finger movements. The measurement methods include goniometric parameters related to the finger postures and flexion dynamics. Glove-type motion sensors are the type of gloves considered within the scope of this document for testing and measurement. This document describes direct and indirect measurement methods. In the direct measurement method, the angles of the joints of each finger are directly measured by a goniometer. The indirect method uses a measurement device such as a servomotor-based angle-measuring device. This document is applicable to angle measurement of all gloves with glove-type motion sensors without limitation of the device technology or size.
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This part of IEC 63203-801 specifies low complexity Medium Access Control (MAC) for SmartBAN.
As the use of wearables and connected body sensor devices grows rapidly in the Internet of Things (IoT), Wireless Body Area Networks (BAN) facilitate the sharing of data in smart environments such as smart homes, smart life etc. In specific areas of digital healthcare, wireless connectivity between the edge computing device or hub coordinator and the sensing nodes requires a standardized communication interface and protocols.
The present document describes the MAC specifications:
- Channel Structure,
- MAC Frame Formats,
- MAC functions.
- Standard41 pagesEnglish languagesale 10% offe-Library read for1 day
NEW!IEC 62031:2018 is available as IEC 62031:2018 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 62031:2018 specifies general and safety requirements for light-emitting diode (LED) modules: - non-integrated LED modules (LEDni modules) and semi-integrated LED modules (LEDsi modules) for operation under constant voltage, constant current or constant power; - Integrated LED modules (LEDi modules) for use on DC supplies up to 250 V or AC supplies up to 1 000 V at 50 Hz or 60 Hz. This second edition cancels and replaces the first edition published in 2008, Amendment 1:2012 and Amendment 2:2014. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a. the scope was clarified as well as the wording in several other clauses; b. the normative references were updated; c. the definitions for "replaceable LED module", "non-replaceable LED module" and "non-user replaceable LED module" were introduced while other definitions covered by IEC 62504 have been removed; d. the marking clause was restructured and a table added to provide an informative overview; e. the marking requirements for built-in LED modules were changed; f. the entry for the marking with the working voltage was revised; g. the provisions for terminals and heat management were revised; h. Annex B was deleted; i. information for luminaire design with regard to working voltage and water contact was introduced; j. an abnormal temperature test was introduced.
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IEC 63364-1:2022 specifies terms, the test method, and the report of sound variation detection system based on IoT. It provides the evaluation method for each part of the sound variation detection system based on IoT in the block diagram, the characterization parameters, symbols, test setups and the conditions. In addition, this document defines the configuration items and criteria of standard space and firing situation for the quality evaluation measurement of sound field variation detection system with IoT.
- Standard24 pagesEnglish and French languagesale 15% off
IEC 62951-9:2022(E) specifies the test methods for evaluating the performance of unipolar-type one transistor one resistor (1T1R) resistive memory cells. The performance test methods in this document include read, forming, SET, RESET, endurance and retention. This document is applicable to flexible devices as well as rigid resistive memory devices without any limitations prone to device technology and size.
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This part of IEC 60749 provides a test method that is intended to evaluate and compare drop
performance of surface mount electronic components for handheld electronic product
applications in an accelerated test environment, where excessive flexure of a circuit board
causes product failure. The purpose is to standardize the test board and test methodology to
provide a reproducible assessment of the drop test performance of surface-mounted
components while producing the same failure modes normally observed during product level
test.
This document aims at prescribing a standardized test method and reporting procedure. This is
not a component qualification test and is not meant to replace any system level drop test that
is sometimes used to qualify a specific handheld electronic product. The standard is not meant
to cover the drop test required to simulate shipping and handling-related shock of electronic
components or PCB assemblies. These requirements are already addressed in test methods
such as IEC 60749-10. The method is applicable to both area array and perimeter-leaded
surface mounted packages.
This test method uses an accelerometer to measure the mechanical shock duration and
magnitude applied which is proportional to the stress on a given component mounted on a
standard board. The test method described in IEC 60749-40 uses strain gauge to measure the
strain and strain rate of a board in the vicinity of a component. The customer specification states
which test method is to be used.
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IEC 60747-16-7:2022 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.
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IEC 60747-16-8:2022 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit limiters.
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IEC 60749-37:2022 is available as IEC 60749-37:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-37:2022 provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test. This edition includes the following significant technical changes with respect to the previous edition: - correction of a previous technical error concerning test conditions; - updates to reflect improvements in technology.
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IEC 60749-37:2022 is available as IEC 60749-37:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-37:2022 provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test. This edition includes the following significant technical changes with respect to the previous edition:
- correction of a previous technical error concerning test conditions;
- updates to reflect improvements in technology.
- Standard43 pagesEnglish and French languagesale 15% off
IEC TR 63357:2022(E) describes standardization roadmap of fault test methods for integrated circuits used in automotive vehicles. Since automotive vehicles are exposed in harsh environment such as very low or high temperature, vibration, high frequency signals, etc. Therefore, they are tested for possible faults which can be caused by harsh environment. There are several fault test methods and related issues to be standardized.
Semiconductor devices used in automotive vehicles are exposed in harsh environment of very high or very low temperature, vibration, high frequency signals, etc. Therefore, they are tested for possible faults which can be caused by harsh environment Evaluation results following this fault test methods will provide robustness of the semiconductor device.
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IEC 62007-1:2015 is a specification template for essential ratings and characteristics of the following categories of semiconductor optoelectronic devices to be used in the field of fibre optic systems and subsystems:
- semiconductor photoemitters;
- semiconductor photoelectric detectors;
- monolithic or hybrid integrated optoelectronic devices and their modules. This part of IEC 62007 provides a frame for the preparation of detail specifications for the essential ratings and characteristics. In using this part of IEC 62007, detail specification writers add but do not delete specification parameters and/or groups of specification parameters for particular applications. This third edition cancels and replaces the second edition published in 2008. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition. The definitions of some symbols and terms are revised in order to harmonize them with those in other SC 86C documents; A clause on APD-TIA has been added. Keywords: semiconductor optoelectronic devices, semiconductor photoemitters, semiconductor photoelectric detectors, monolithic or hybrid integrated optoelectronic devices
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IEC 62047-42:2022 specifies measuring methods of electro-mechanical conversion characteristics of piezoelectric thin film on microcantilever, which is typical structure of actual micro sensors and micro actuators. In order to obtain actual and precise piezoelectric coefficient of the piezoelectric thin films with microdevice structures, and this document reports the schema to determine the characteristic parameters for consumer, industry or any other applications of piezoelectric devices. This document applies to piezoelectric thin films on microcantilever fabricated by MEMS process.
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IEC 6074716-6:2019 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit frequency multipliers.
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IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.
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This part of IEC 60749 is intended to evaluate devices in the free state and assembled to printed
wiring boards for use in electrical equipment. The method is intended to determine the
compatibility of devices and subassemblies to withstand moderately severe shocks. The use of
subassemblies is a means to test devices in usage conditions as assembled to printed wiring
boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced
by handling, transportation or field operation can disturb operating characteristics, particularly
if the shock pulses are repetitive. This is a destructive test intended for device qualification
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IEC 60749-10:2022 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification. This edition cancels and replaces the first edition published in 2002. This edition includes the following significant technical changes with respect to the previous edition: covers both unattached components and components attached to printed wiring boards; tolerance limits modified for peak acceleration and pulse duration; mathematical formulae added for velocity change and equivalent drop height.
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IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; - addition of a Bibliography, which includes ASTM standards relevant to this test method.
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IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
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The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
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IEC 60747-5-4:2022(E) specifies the terminology, the essential ratings and characteristics as well as the measuring methods of semiconductor lasers.
This edition includes the following significant technical changes with respect to the previous edition:
References for the terms and definitions related to the lighting area, IEC 60050-845, are revised based on IEC 60050-845:2020;
Emission angle is changed to radiation angle in 3.3.2;
Definitions of rise time and fall time in 3.4.1 are revised based on the publication IEC 60050-521:2002;
Spectral linewidth is added to Table 1 in Clause 4;
Conditions for carrier-to-noise ratio of Table 1 in Clause 4 is amended.
Error in the equation for carrier-to-noise ratio in 5.2.2 is corrected;
Precaution against the equipment used for carrier-to-noise ratio measurement is added in 5.2.2;
Explanation for the measurement method of the small signal cut-off frequency in 5.3.2 of the first edition is deleted because it has been defined in the latest version of ISO 11554;
Reference document for the lifetime in 5.4 is amended;
Precaution against the measuring arrangement used for the half-intensity width and 1/e2-intensity is added in 5.5.3;
Reference tables in Annex A, Annex B and Annex C are revised by following the latest version of ISO publications.
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IEC 60749-10:2022 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.
This edition cancels and replaces the first edition published in 2002. This edition includes the following significant technical changes with respect to the previous edition:
covers both unattached components and components attached to printed wiring boards;
tolerance limits modified for peak acceleration and pulse duration;
mathematical formulae added for velocity change and equivalent drop height.
- Standard24 pagesEnglish and French languagesale 15% off
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
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IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
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This part of IEC 60749 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD).
All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application.
This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J.
The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels.
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IEC 60749-28:2022 is available as IEC 60749-28:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. This edition includes the following significant technical changes with respect to the previous edition: - a new subclause and annex relating to the problems associated with CDM testing of integrated circuits and discrete semiconductors in very small packages; - changes to clarify cleaning of devices and testers.
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In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices [1]
b) GaN integrated power solutions
c) the above in wafer and package levels
Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications.
The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
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In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN enhancement and depletion-mode discrete power devices [1] b) GaN integrated power solutions c) the above in wafer and package levels Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications. The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
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IEC 60747-5-14:2022(E) specifies the measuring method of the surface temperature of single LED die or package, based on the thermoreflectance (TR) method. TR is the effect that the reflectance of light changes with the temperature of a substance. This part measures relative change in the reflectance of light from a metal film deposited nearby on the metallurgical pn junction as the relative change in the LED junction temperature. The surface temperature can be approximated as the junction temperature when the thermal resistance effect between the metal surface and the pn junction is negligibly small.
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