SIST EN 62276:2013

SLOVENSKI STANDARD
SIST EN 62276:2013
01-marec-2013
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Single crystal wafers for surface acoustic wave (SAW) devices applications -
Specifications and measuring method
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und
Messverfahren
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques
de surface (OAS) - Spécifications et méthodes de mesure
Ta slovenski standard je istoveten z: EN 62276:2013
ICS:
31.140 3LH]RHOHNWULþQHLQ Piezoelectric and dielectric
GLHOHNWULþQHQDSUDYH devices
SIST EN 62276:2013 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 62276:2013

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SIST EN 62276:2013

EUROPEAN STANDARD
EN 62276

NORME EUROPÉENNE
January 2013
EUROPÄISCHE NORM

ICS 31.140 Supersedes EN 62276:2005


English version


Single crystal wafers
for surface acoustic wave (SAW) device applications -
Specifications and measuring methods
(IEC 62276:2012)


Tranches monocristallines pour Einkristall-Wafer für Oberflächenwellen-
applications utilisant des dispositifs à (OFW-)Bauelemente -
ondes acoustiques de surface (OAS) - Festlegungen und Messverfahren
Spécifications et méthodes de mesure (IEC 62276:2012)
(CEI 62276:2012)





This European Standard was approved by CENELEC on 2012-11-23. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the CEN-CENELEC Management Centre or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the CEN-CENELEC Management Centre has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany,
Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland,
Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Management Centre: Avenue Marnix 17, B - 1000 Brussels


© 2013 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62276:2013 E

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SIST EN 62276:2013
EN 62276:2013 - 2 -

Foreword
The text of document 49/1005/FDIS, future edition 2 of IEC 62276, prepared by IEC TC 49, "Piezoelectric,
dielectric and electrostatic devices and associated materials for frequency control, selection and
detection", was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as
EN 62276:2013.

The following dates are fixed:
(dop) 2013-08-23
• latest date by which the document has
to be implemented at national level by
publication of an identical national
standard or by endorsement
(dow) 2015-11-23
• latest date by which the national
standards conflicting with the
document have to be withdrawn

This document supersedes EN 62276:2005.
EN 62276:2013 includes the following significant technical changes with respect to EN 62276:2005:
– terms and definitions are rearranged in accordance with the alphabetical order;
– “reduced LN” is appended to terms and definitions;
– “reduced LT” is appended to terms and definitions;
– reduction process is appended to terms and definitions.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent
rights.

Endorsement notice
The text of the International Standard IEC 62276:2012 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards indicated:
IEC 60862-1 NOTE  Harmonized as EN 60862-1.
IEC 60862-2 NOTE  Harmonized as EN 60862-2.
IEC 60862-3 NOTE  Harmonized as EN 60862-3.
IEC 61019-1 NOTE  Harmonized as EN 61019-1.
IEC 61019-2 NOTE  Harmonized as EN 61019-2.
ISO 4287 NOTE  Harmonized as EN ISO 4287.

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SIST EN 62276:2013
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Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications

The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.

Publication Year Title EN/HD Year

IEC 60410 1973 Sampling plans and procedures for inspection - -
by attributes


IEC 60758 2008 Synthetic quartz crystal - Specifications and EN 60758 2009
guidelines for use

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SIST EN 62276:2013

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SIST EN 62276:2013




IEC 62276

®

Edition 2.0 2012-10




INTERNATIONAL



STANDARD




NORME



INTERNATIONALE
colour

inside










Single crystal wafers for surface acoustic wave (SAW) device applications –

Specifications and measuring methods




Tranches monocristallines pour applications utilisant des dispositifs à ondes

acoustiques de surface (OAS) – Spécifications et méthodes de mesure
















INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE

PRICE CODE
INTERNATIONALE

CODE PRIX X


ICS 31.140 ISBN 978-2-83220-433-7



Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN 62276:2013
– 2 – 62276 © IEC:2012
CONTENTS
FO R EW O RD . 5
INT R O D UCT IO N . 7
1 Sc op e . 8
2 Normative references . 8
3 Terms and definitions . 8
3.1 Single crystals for SAW wafer . 8
3.2 Terms and definitions related to LN and LT crystals . 9
3.3 Terms and definitions related to all crystals . 9
3.4 Flatness . 10
3.5 Definitions of appearance defects. 13
3.6 Other terms and definitions . 13
4 Requirements . 15
4.1 Material specification . 15
4.1.1 Synthetic quartz crystal . 15
4.1.2 LN . 15
4.1.3 LT. 15
4.1.4 LBO, LGS . 15
4.2 Wafer specifications . 15
4.2.1 General . 15
4.2.2 Diameters and tolerances . 15
4.2.3 Thickness and tolerance . 15
4.2.4 Orientation flat . 16
4.2.5 Secondary flat . 16
4.2.6 Back surface roughness . 16
4.2.7 Warp . 16
4.2.8 TV5 or TTV . 16
4.2.9 Front (propagation) surface finish . 17
4.2.10 Front surface defects . 17
4.2.11 Surface orientation tolerance . 18
4.2.12 Inclusions . 18
4.2.13 Etch channel density and position of seed for quartz wafer . 18
4.2.14 Bevel . 18
4.2.15 Curie temperature and tolerance . 18
4.2.16 Lattice constant . 18
4.2.17 Bulk resistivity (conductivity) for reduced LN and LT . 18
5 Sampling plan . 19
5.1 Sampling . 19
5.2 Sampling frequency . 19
5.3 Inspection of whole population . 19
6 Test methods . 19
6.1 Diameter . 19
6.2 T hic k nes s . 19
6.3 Dimension of OF . 19
6.4 Orientation of OF . 20
6.5 TV5 . 20
6.6 Warp . 20

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SIST EN 62276:2013
62276 © IEC:2012 – 3 –
6.7 TTV . 20
6.8 Front surface defects. 20
6.9 Inclusio ns . 20
6.10 Back surface roughness . 20
6.11 Orientation . 20
6.12 Curie temperature . 20
6.13 Lattice constant . 20
6.14 Bulk resistivity . 20
7 Identification, labelling, packaging, delivery condition . 21
7.1 Packaging . 21
7.2 Labelling and identification . 21
7.3 Delivery condition . 21
8 Measurement of Curie temperature . 21
8.1 General . 21
8.2 DTA method . 21
8.3 Dielectric constant method . 22
9 Measurement of lattice constant (Bond method) . 23
10 Measurement of face angle by X-ray . 24
10.1 Measurement principle . 24
10.2 Measurement method . 25
10.3 Measuring surface orientation of wafer . 25
10.4 Measuring OF flat orientation . 25
10.5 Typical wafer orientations and reference planes . 25
11 Measurement of bulk resistivity . 26
11.1 Resistance measurement of a wafer . 26
11.2 E l ec tr od e . 26
11.3 Bulk resistivity . 27
12 Visual inspections . 27
12.1 Front surface inspection method . 27
Annex A (normative) Expression using Euler angle description for piezoelectric single
crystals . 29
Annex B (informative) Manufacturing process for SAW wafers . 33
Bibliography . 40

Figure 1 – Wafer sketch and measurement points for TV5 determination . 10
Figure 2 – Schematic diagram of TTV . 11
Figure 3 – Schematic diagram of warp . 11
Figure 4 – Example of site distribution for LTV measurement . 12
Figure 5 – LTV value of each site. 12
Figure 6 – Schematic of a DTA system . 22
Figure 7 – Schematic of a dielectric constant measurement system . 22
Figure 8 – The Bond method . 24
Figure 9 – Measurement method by X-ray . 24
Figure 10 – Relationship between cut angle and lattice planes . 25
Figure 11 – Measuring circuit . 26
Figure 12 – Resistance measuring equipment . 26

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SIST EN 62276:2013
– 4 – 62276 © IEC:2012
Figure 13 – Shape of electrode . 27
Figure A.1 – Definition of Euler angles to rotate coordinate system (X, Y, Z) onto
) . 30
( x , x , x
1 2 3
Figure A.2 – SAW wafer coordinate system . 30
Figure A.3 – Relationship between the crystal axes, Euler angles, and SAW orientation
for some wafer orientations . 32
Figure B.1 – Czochralski crystal growth method . 34
Figure B.2 – Example of non-uniformity in crystals grown from different starting melt
compositions . 36
Figure B.3 – Schematic of a vertical Bridgman furnace and example of temperature
d is tr i bu t io n . 37

Table 1 – Description of wafer orientations . 14
Table 2 – Roughness, warp, TV5 and TTV specification limits . 17
Table 3 – Crystal planes to determine surface and OF orientations . 25
Table 4 – Electrode size . 27
Table A.1 – Selected SAW substrate orientations and corresponding Euler angles . 31

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SIST EN 62276:2013
62276 © IEC:2012 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SINGLE CRYSTAL WAFERS FOR SURFACE ACOUSTIC
WAVE (SAW) DEVICE APPLICATIONS –
SPECIFICATIONS AND MEASURING METHODS

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62276 has been prepared by IEC technical committee 49:
Piezoelectric, dielectric and electrostatic devices and associated materials for frequency
control, selection and detection.
This second edition cancels and replaces the first edition of IEC 62276 published in 2005.
This second edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
– terms and definitions are rearranged in accordance with the alphabetical order;
– “reduced LN” is appended to terms and definitions;
– “reduced LT” is appended to terms and definitions;
– reduction process is appended to terms and definitions.

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SIST EN 62276:2013
– 6 – 62276 © IEC:2012
The text of this standard is based on the following documents:
FDIS Report on voting
49/1005/FDIS 49/1011/RVD

Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
‡ reconfirmed,
‡ withdrawn,
‡ replaced by a revised edition, or
‡ amended.

IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.

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SIST EN 62276:2013
62276 © IEC:2012 – 7 –
INTRODUCTION
A variety of piezoelectric materials are used for surface acoustic wave (SAW) filter and
resonator applications. Prior to the 1996 Rotterdam IEC TC 49 meeting, wafer specifications
were typically negotiated between users and suppliers. During the meeting, a proposal was
announced to address wafer standardization. This standard has been prepared in order to
provide industry standard technical specifications for manufacturing piezoelectric single
crystal wafers to be used in surface acoustic wave devices.

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SIST EN 62276:2013
– 8 – 62276 © IEC:2012
SINGLE CRYSTAL WAFERS FOR SURFACE ACOUSTIC
WAVE (SAW) DEVICE APPLICATIONS –
SPECIFICATIONS AND MEASURING METHODS



1 Scope
This International Standard applies to the manufacture of synthetic quartz, lithium niobate
(LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS)
single crystal wafers intended for use as substrates in the manufacture of surface acoustic
wave (SAW) filters and resonators.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and
are indispensable for its application. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60410:1973, Sampling plans and procedures for inspection by attributes
IEC 60758:2008, Synthetic quartz crystal – Specifications and guide for use
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1 Single crystals for SAW wafer
3.1.1
as-grown synthetic quartz crystal
right-handed or left-handed single crystal quartz is grown hydrothermally
Note 1 to entry: The term “as-grown” indicates a state prior to mechanical fabrication.
Note 2 to entry: See IEC 60758 for further information concerning crystalline quartz.
3.1.2
lithium niobate
LN
single crystals approximately described by chemical formula LiNbO , grown by Czochralski
3
(crystal pulling from melt) or other growing methods
3.1.3
lithium tantalate
LT
single crystals approximately described by chemical formula LiTaO , grown by Czochralski
3
(crystal pulling from melt) or other growing methods
Note 1 to entry: This note applies to the French language only.

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SIST EN 62276:2013
62276 © IEC:2012 – 9 –
3.1.4
lithium tetraborate
LBO
single crystals described by the chemical formula to Li B O , grown by Czochralski (crystal
2 4 7
pulling from melt), vertical Bridgman, or other growing methods
Note 1 to entry: This note applies to the French language only.
3.1.5
lanthanum gallium silicate
LGS
single crystals described by the chemical formula to La Ga SiO , grown by Czochralski
3 5 14
(crystal pulling from melt) or other growing methods
Note 1 to entry: This note applies to the French language only.
3.2 Terms and definitions related to LN and LT crystals
3.2.1
Curie temperature
T
c
phase transition temperature between ferroelectric and paraelectric phases measured by
differential thermal analysis (DTA) or dielectric measurement
3.2.2
single domain
ferroelectric crystal with uniform electrical polarization throughout (for LN and LT)
3.2.3
polarization process
electrical process used to establish a single domain crystal
Note 1 to entry: The polarization process is also referred to as “poling”.
3.2.4
reduction process
REDOX reaction to increase conductivity to reduce the harmful effects of pyroelectricity
3.2.5
reduced LN
LN treated with a reduction process
Note 1 to entry: Reduced LN is sometimes referred to as “black LN”.
3.2.6
reduced LT
LT treated with a reduction process
Note 1 to entry: Reduced LT is sometimes referred to as “black LT”.
3.3 Terms and definitions related to all crystals
3.3.1
lattice constant
length of unit cell along a major crystallographic axis measured by X-ray using the Bond
method
3.3.2
congruent composition
chemical composition of a single crystal in a thermodynamic equilibrium with a molten solution
of the same composition during the growth process

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SIST EN 62276:2013
– 10 – 62276 © IEC:2012
3.3.3
twin
crystallographic de
...