SIST EN 60749-8:2004

SLOVENSKI SIST EN 60749-8:2004

STANDARD
julij 2004
Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing
(IEC 60749-8:2002 + corrigendum 2003)
ICS 31.080.01 Referenčna številka
SIST EN 60749-8:2004(en)
©  Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno

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EUROPEAN STANDARD EN 60749-8
NORME EUROPÉENNE
EUROPÄISCHE NORM June 2003

ICS 31.080.01


English version


Semiconductor devices -
Mechanical and climatic test methods
Part 8: Sealing
(IEC 60749-8:2002 + corrigendum 2003)


Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Méthodes d'essais mécaniques Mechanische und klimatische Prüfverfahren
et climatiques Teil 8: Dichtheit
Partie 8: Etanchéité (IEC 60749-8:2002 + Corrigendum 2003)
(CEI 60749-8:2002 + corrigendum 2003)






This European Standard was approved by CENELEC on 2002-09-24. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic,
Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta,
Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels


© 2003 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.

Ref. No. EN 60749-8:2003 E

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EN 60749-8:2003 - 2 -
Foreword
The text of the International Standard IEC 60749-8:2002 was approved by CENELEC as EN 60749-8
on 2002-09-24.
The text of this International Standard was reproduced from IEC 60749:1996, chapter 3, clause 5
without change. Therefore, it has not been submitted to vote a second time and is still based on
document 47/1574/FDIS.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2004-01-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2005-10-01
Each test method governed by this standard and which is part of the series is a stand-alone
document, numbered EN 60749-2, EN 60749-3, etc. The numbering of these test methods is
sequential, and there is no relationship between the number and the test method (i.e. no grouping of
test methods). The list of these tests will be available in the CENELEC internet site and in the
catalogue.
Updating of any of the individual test methods is independent of any other part.
Annexes designated "normative" are part of the body of the standard.
In this standard, annex ZA is normative.
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 60749-8:2002 and its corrigendum April 2003 was approved
by CENELEC as a European Standard without any modification.
__________

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- 3 - EN 60749-8:2003
Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications
This European Standard incorporates by dated or undated reference, provisions from other
publications. These normative references are cited at the appropriate places in the text and the
publications are listed hereafter. For dated references, subsequent amendments to or revisions of any
of these publications apply to this European Standard only when incorporated in it by amendment or
revision. For undated references the latest edition of the publication referred to applies (including
amendments).
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
Publication Year Title EN/HD Year
IEC 60068-2-17 1994 Environmental testing EN 60068-2-17 1994
Part 2: Tests - Test Q: Sealing

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NORME CEI
INTERNATIONALE IEC
60749-8
INTERNATIONAL
Première édition
STANDARD
First edition
2002-08
Dispositifs à semiconducteurs –
Méthodes d'essais mécaniques et climatiques –
Partie 8:
Etanchéité
Semiconductor devices –
Mechanical and climatic test methods –
Part 8:
Sealing
 IEC 2002 Droits de reproduction réservés  Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch  Web: www.iec.ch
CODE PRIX
P
Commission Electrotechnique Internationale PRICE CODE
International Electrotechnical Commission
Международная Электротехническая Комиссия
Pour prix, voir catalogue en vigueur
For price, see current catalogue

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60749-8 © IEC:2002 – 3 –
CONTENTS
FOREWORD . 5
INTRODUCTION .9
1 Scope and object .11
2 Normative references.11
3 General terms.11
3.1 Units of pressure .11
3.2 Standard leak rate .11
3.3 Measured leak rate .11
3.4 Equivalent standard leak rate .13
4 Bomb pressure test.13
5 Fine leak detection: radioactive krypton method.13
5.1 Object.13
5.2 General description .13
5.3 Personnel precautions .17
5.4 Procedure.17
5.5 Specified conditions.19
5.6 Gross leak detection.19
6 Fine leak detection: tracer gas (helium) method with mass spectrometer .19
6.1 General .19
6.2 Method 1: specimens not filled with helium during manufacture – Fixed
method .19
6.3 Method 2: specimens not filled with helium during manufacture – Flexible
method .21
6.4 Method 3: specimens filled with helium during manufacture .23
6.5 Gross leak detection.23
7 Gross leaks, perfluorocarbon vapour method using electronic detection apparatus .23
7.1 Object.23
7.2 General description .23
7.3 Test apparatus .23
7.4 Test method .25
7.5 Reject criterion .25
8 Gross leak – Perfluorocarbon – bubble detection method.27
9 Test condition E, weight-gain gross-leak detection.27
9.1 Object.27
9.2 Equipment .27
9.3 Procedure.29
9.4 Failure criteria .29
10 Penetrant dye gross leak detection .31
11 Gross leak re-test .31

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60749-8 © IEC:2002 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 8: Sealing
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-8 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this test method is reproduced from IEC 60749 Ed.2, chapter 3, clause 5 without
change. It has therefore not been submitted to vote a second time and is still based on the
following documents:
FDIS Report on voting
47/1574/FDIS 47/1576/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.
Each test method governed by IEC 60749-1 and which is part of the series is a stand-alone
document, numbered IEC 60749-2, IEC 60749-3, etc. The numbering of these test methods is
sequential, and there is no relationship between the number and the test method (i.e. no
grouping of test methods). The list of these tests will be available in the IEC Internet site
and in the catalogue.

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60749-8 © IEC:2002 – 7 –
Updating of any of the individual test methods is independent of any other part.
The committee has decided that the contents of this publication will remain unchanged until
2012. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
The contents of the corrigenda of April 2003 and August 2003 have been included in this
copy.

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60749-8 © IEC:2002 – 9 –
INTRODUCTION
Activity within IEC technical committee 47, working group 2, includes the generation,
coordination and review of climatic, electrical (of which only ESD, latch-up and electrical
conditions for life tests are considered), mechanical test methods, and associated inspection
techniques needed to assess the quality and reliability of the design and manufacture of
semiconductor products and processes.

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60749-8 © IEC:2002 – 11 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 8: Sealing
1 Scope and object
This part of IEC 60749 is applicable to semiconductor devices (discrete devices and
integrated circuits)
The object of this test method is to determine the leak rate of semiconductor devices.
NOTE This test is identical to the test method contained in clause 5 of chapter 3 of IEC 60749 (1996), amendment
2, apart from the addition of this clause and clause 2 and the subsequent renumbering.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60068-2-17:1994, Environmental testing – Part 2: Tests – Test Q: Sealing
3 General terms
3.1 Units of pressure
The International System of Units (SI) recommends the use of the Pascal (Pa) as the unit of
pressure. The commonly used units are, however, the absolute atmosphere or the bar (where
5
1 absolute atmosphere = 1 bar = 10 Pa). The unit used in this test method is the Pascal with
the bar used as an alternative.
3.2 Standard leak rate
The standard leak rate is defined as that quantity of dry air at 25 °C in pascals (bars) cubic
centimeters flowing through a leak or multiple leak paths per second when the high-pressure

5 2
side is at 10 Pa (1 bar) and the low-pressure side is at a pressure of not greater than 10 Pa
–3
(10 bar). The standard leak rate shall be expressed in units of pascals cubic centimetres
per second (bars cubic centimetres per second).
3.3 Measured leak rate
The measured leak rate R is defined as the leak rate of a given package as measured
(He)
under specified conditions and employing a specified test medium. The measured leak rate
shall be expressed in units of pascals cubic centimetres per second (bars cubic centimetres
per second). For the purpose of comparison with rates determined by other methods of
testing, the measured leak rates must be converted to equivalent standard leak rates.

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60749-8 © IEC:2002 – 13 –
3.4 Equivalent standard leak rate
The equivalent standard leak rate (L) of a given package, with a measured leak rate R ,
(He)
is defined as the leak rate of the same package with the same leak geometry, that would exist
under the standard conditions of 3.2. The formula in 6.3 (which does not apply to test
condition 5) represents the L/R ratio and gives the equivalent standard leak rate (L) of the
package with a measured leak rate R , where the package volume and leak test
(He)
conditioning parameters influence the measured value of R . The equivalent standard leak
(He)
rate shall be expressed in units of units of pascals cubic centimetres per second (bars cubic
centimeters per second).
4 Bomb pressure test
Reference: IEC 60068-2-17.
This test shall be in accordance with test Ql, with the following specific requirements:
– test liquid: 95 % methyl alcohol and 5 % water mixture, with addition of a detergent;
– temperature of the test liquid: 25 °C ± 5 °C;
5
– pressure: 4,5·10 Pa (4,5 bar);
– duration of conditioning: 16 h;
– cleaning liquid: de-ionized water;
– recovery: between two days and two weeks.
NOTE The use of this test is not recommended for semiconductor devices (see annex F to IEC 60068-2-17).
5 Fine leak detection: radioactive krypton method
Reference: none.
5.1 Object
To determine the leak rate of a semiconductor device by measuring the radiation level present
within the device after it has been pressurized in a chamber with suitable radioactive tracer
gas.
This method is intended to be specified for devices which are designed to be hermetically
sealed in glass, metal or ceramic (or combination thereof) encapsulations and is suitable for
3 –1 –5 3 –1
equivalent standard leak rates smaller than 1 Pa·cm ·s (10 bar·cm ·s ).
5.2 General description
5.2.1 The numerical values given are applicable for krypton 85 tracer gas and for equivalent
–3 3 –1 –8 3 –1
standard leak rate limit in the order of 5 × 10 Pa·cm ·s (5 × 10 bar·cm ·s ). The use of
other tracer gases would require other numerical values.
5.2.2 Equipment
Equipment for this test consists of a radioactive tracer activation tank and a counting station
with sufficient sensitivity to determine the radiation level of the tracer gas inside the device.

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60749-8 © IEC:2002 – 15 –
The equipment operates with a tracer gas mixture of dry nitrogen and krypton 85 with a
–3
specified activity (minimum: 100 μCi·cm ) under standard atmospheric conditions.
Instructions for the use of the leak testing equipment, as supplied by the manufacturer of the
equipment, shall be followed in calibrating and operating the equipment. Test results obtained
under non-preferred conditions can be compared with those under preferred conditions by
conversion through the appropriate formula given in these instructions.
5.2.3 Activation parameters
The activation pressure and soak time shall be determined in accordance with the following
equation (see note below):
R
Q = (1)
s
skPTt
where
3 –1 3 –1
Q is the maximum leak rate allowable for the device to be tested, in Pa·cm ·s (bar·cm ·s ) Kr;
s
R is the counts per minute above the ambient background after activation if the device
leak rate were exactly equal to Q . This is the reject count above the background of
s
both the counting equipment and the component if it has been through previous
radioactive leak tests;

s is the specific activity, in microcuries per cubic centimetres of the krypton 85 gas in the
activation system;
k is the overall counting efficiency of the scintillation crystal in counts per minute per one
microcurie of krypton 85 in the internal cavity of the specific component being
evaluated. This factor depends upon component configuration and dimensions of the
scintillation crystal. The counting efficiency shall be determined in accordance with
5.2.4;
2 2
P = P – P ,
e
i
where
P is the absolute activation pressure in pascals (bars) and P is the original absolute
e i
internal pressure of the devices in pascals (bars). The activation pressure (P ) may be
e
established by specification, or if a convenient soak time (T) has been established,
the activation pressure (P ) can be adjusted to satisfy equation (1);
e
T is the soak time that the devices are to be activated, in hours;
t is the conversion of hours to seconds which is equal to 3 600 seconds/hour.
2 2
NOTE The complete version of equation (1) contains a factor P – (ΔP) in the numerator which is a correction
0
factor for elevation above sea level
...