SIST EN 62132-2:2011

SLOVENSKI STANDARD
SIST EN 62132-2:2011
01-maj-2011
Integrirana vezja - Meritve elektromagnetne odpornosti - 2. del: Meritev odpornosti
proti sevanju - Metoda s celico TEM in širokopasovno celico TEM (IEC 62132-
2:2010)
Integrated circuits - Measurement of electromagnetic immunity - Part 2: Measurement of
radiated immunity - TEM cell and wideband TEM cell method (IEC 62132-2:2010)
Integrierte Schaltungen - Messung der elektromagnetischen Störfestigkeit - Teil 2:
Messung der Störfestigkeit bei Einstrahlungen - TEM-Zellen- und Breitband-
TEMZellenverfahren (IEC 62132-2:2010)
Circuits intégrés - Mesure de l'immunité électromagnétique - Partie 2: Mesure de
l'immunité rayonnée - Méthode de cellule TEM et cellule TEM à large bande (CEI 62132-
2:2010)
Ta slovenski standard je istoveten z: EN 62132-2:2011
ICS:
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
33.100.20 Imunost Immunity
SIST EN 62132-2:2011 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 62132-2:2011

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SIST EN 62132-2:2011

EUROPEAN STANDARD
EN 62132-2

NORME EUROPÉENNE
March 2011
EUROPÄISCHE NORM

ICS 31.200


English version


Integrated circuits -
Measurement of electromagnetic immunity -
Part 2: Measurement of radiated immunity -
TEM cell and wideband TEM cell method
(IEC 62132-2:2010)


Circuits intégrés -  Integrierte Schaltungen -
Mesure de l'immunité électromagnétique - Messung der elektromagnetischen
Partie 2: Mesure de l'immunité rayonnée - Störfestigkeit -
Méthode de cellule TEM et cellule TEM à Teil 2: Messung der Störfestigkeit bei
large bande Einstrahlungen -
(CEI 62132-2:2010) TEM-Zellen- und Breitband-TEM-
Zellenverfahren
(IEC 62132-2:2010)




This European Standard was approved by CENELEC on 2011-01-02. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Management Centre: Avenue Marnix 17, B - 1000 Brussels


© 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62132-2:2011 E

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SIST EN 62132-2:2011
EN 62132-2:2011 - 2 -
Foreword
The text of document 47A/838/FDIS, future edition 1 of IEC 62132-2, prepared by SC 47A, Integrated
circuits, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was
approved by CENELEC as EN 62132-2 on 2011-01-02.
This part of EN 62132 is to be read in conjunction with EN 62132-1.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2011-10-02
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2014-01-02
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 62132-2:2010 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards indicated:
[7] IEC 61000-4-3:2006 NOTE  Harmonized as EN 61000-4-3:2006 (not modified).
   IEC 61000-4-3:2006/A1:2007 NOTE  Harmonized as EN 61000-4-3:2006/A1:2008 (not modified).
[8] IEC 61000-4-6:2008 NOTE  Harmonized as EN 61000-4-6:2009 (not modified).
[9] IEC 61000-4-20:2003 NOTE  Harmonized as EN 61000-4-20:2003 (not modified).
[10] CISPR 16-1-1:2006 NOTE  Harmonized as EN 55016-1-1:2007 (not modified).
[12] CISPR 16-1-5:2003 NOTE  Harmonized as EN 55016-1-5:2004 (not modified).
[13] CISPR 16-2-1:2008 NOTE  Harmonized as EN 55016-2-1:2009 (not modified).
[15] CISPR 16-2-3:2006 NOTE  Harmonized as EN 55016-2-3:2006 (not modified).
[16] CISPR 16-2-4:2003 NOTE  Harmonized as EN 55016-2-4:2004 (not modified).
__________

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SIST EN 62132-2:2011
- 3 - EN 62132-2:2011
Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications

The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.

Publication Year Title EN/HD Year

IEC 60050-131 2002 International Electrotechnical Vocabulary - -
(IEV) -
Part 131: Circuit theory


IEC 60050-161 1990 International Electrotechnical Vocabulary - -
(IEV) -
Chapter 161: Electromagnetic compatibility


IEC 61967-2 - Integrated circuits - Measurement of EN 61967-2 -
electromagnetic emissions,
150 kHz to 1 GHz -
Part 2: Measurement of radiated emissions -
TEM cell and wideband TEM cell method


IEC 62132-1 2006 Integrated circuits - Measurement of EN 62132-1 2006
electromagnetic immunity, + corr. November 2006
150 kHz to 1 GHz -
Part 1: General conditions and definitions

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SIST EN 62132-2:2011

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SIST EN 62132-2:2011
IEC 62132-2
®
Edition 1.0 2010-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE


Integrated circuits – Measurement of electromagnetic immunity –
Part 2: Measurement of radiated immunity – TEM cell and wideband TEM cell
method

Circuits intégrés – Mesure de l’immunité electromagnétique –
Partie 2: Mesure de l’immunité rayonnée – Méthode de cellule TEM et cellule
TEM à large bande

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
T
CODE PRIX
ICS 31.200 ISBN 978-2-88910-624-0
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN 62132-2:2011
– 2 – 62132-2 © IEC:2010
CONTENTS
FOREWORD.3
1 Scope.5
2 Normative references .5
3 Terms and definitions .5
4 General .6
5 Test conditions .7
6 Test equipment.7
6.1 General .7
6.2 Cables.7
6.3 RF disturbance source .7
6.4 TEM cell.8
6.5 Gigahertz TEM cell.8
6.6 50-Ω termination .8
6.7 DUT monitor.8
7 Test set-up .8
7.1 General .8
7.2 Test set-up details.8
7.3 EMC test board .10
8 Test procedure .10
8.1 General .10
8.2 Immunity measurement .10
8.2.1 General .10
8.2.2 RF disturbance signals .10
8.2.3 Test frequencies.11
8.2.4 Test levels and dwell time .11
8.2.5 DUT monitoring .11
8.2.6 Detail procedure .11
9 Test report.12
Annex A (normative) Field strength characterization procedure.13
Annex B (informative) TEM CELL and wideband TEM cell descriptions.21
Bibliography.22

Figure 1 – TEM and GTEM cell cross-section .9
Figure 2 – TEM cell test set-up .9
Figure 3 – GTEM cell test set-up.10
Figure 4 – Immunity measurement procedure flowchart .12
Figure A.1 – E-field characterization test fixture.14
Figure A.2 – The electric field to voltage transfer function.16
Figure A.3 – H-field characterization test fixture.19
Figure A.4 – The magnetic field to voltage transfer function .20

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SIST EN 62132-2:2011
62132-2 © IEC:2010 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

INTEGRATED CIRCUITS – MEASUREMENT OF
ELECTROMAGNETIC IMMUNITY –

Part 2: Measurement of radiated immunity –
TEM cell and wideband TEM cell method


FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62132-2 has been prepared by subcommittee 47A: Integrated
circuits, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47A/838/FDIS 47A/843/RVD

Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
This part of IEC 62132 is to be read in conjunction with IEC 62132-1.

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SIST EN 62132-2:2011
– 4 – 62132-2 © IEC:2010
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
Future standards in this series will carry the new general title as cited above. Titles of existing
standards in this series will be updated at the time of the next edition.

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SIST EN 62132-2:2011
62132-2 © IEC:2010 – 5 –
INTEGRATED CIRCUITS – MEASUREMENT OF
ELECTROMAGNETIC IMMUNITY –

Part 2: Measurement of radiated immunity –
TEM cell and wideband TEM cell method



1 Scope
This International Standard specifies a method for measuring the immunity of an integrated
circuit (IC) to radio frequency (RF) radiated electromagnetic disturbances. The frequency
range of this method is from 150 kHz to 1 GHz, or as limited by the characteristics of the TEM
cell.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60050-131:2002, International Electrotechnical Vocabulary (IEV) – Part 131: Circuit
theory
IEC 60050-161:1990, International Electrotechnical Vocabulary (IEV) – Chapter 161:
Electromagnetic compatibility
IEC 61967-2, Integrated circuits – Measurement of electromagnetic emissions, 150 kHz to
1 GHz – Part 2: Measurement of radiated emissions – TEM cell and wideband TEM cell
method
IEC 62132-1:2006, Integrated circuits – Measurement of electromagnetic immunity, 150 kHz
to 1 GHz – Part 1: General conditions and definitions
3 Terms and definitions
For the purpose of this document, the definitions in IEC 62132-1, IEC 60050-131 and
IEC 60050-161, as well as the following, apply.
3.1
transverse electromagnetic mode (TEM)
waveguide mode in which the components of the electric and magnetic fields in the
propagation direction are much less than the primary field components across any transverse
cross-section
3.2
TEM waveguide
open or closed transmission line system, in which a wave is propagating in the transverse
electromagnetic mode to produce a specified field for testing purposes.

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SIST EN 62132-2:2011
– 6 – 62132-2 © IEC:2010
3.3
TEM cell
enclosed TEM waveguide, often a rectangular coaxial line, in which a wave is propagated in
the transverse electromagnetic mode to produce a specified field for testing purposes. The
outer conductor completely encloses the inner conductor
3.4
two-port TEM waveguide
TEM waveguide with input/output measurement ports at both ends
3.5
one-port TEM waveguide
TEM waveguide with a single input/output measurement port
NOTE Such TEM waveguides typically feature a broadband line termination at the non-measurement-port end.
3.6
characteristic impedance
for any constant phase wave-front, the magnitude of the ratio of the voltage between the inner
conductor and the outer conductor to the current on either conductor
NOTE The characteristic impedance is independent of the voltage/current magnitudes and depends only on the
cross-sectional geometry of the transmission line. TEM waveguides are typically designed to have a 50 Ω
characteristic impedance. TEM waveguides with a 100 Ω characteristic impedance are often used for transient
testing.
3.7
anechoic material
material that exhibits the property of absorbing, or otherwise reducing, the level of
electromagnetic energy reflected from that material
3.8
broadband line termination
termination which combines a low-frequency discrete-component load, to match the
characteristic impedance of the TEM waveguides (typically 50 Ω), and a high-frequency
anechoic-material volume
3.9
primary (field) component
electric field component aligned with the intended test polarization
NOTE For example, in conventional two-port TEM cells, the septum is parallel to the horizontal floor, and the
primary mode electric field vector is vertical at the transverse centre of the TEM cell.
3.10
secondary (field) component
in a Cartesian coordinate system, either of the two electric field components orthogonal to the
primary field component and orthogonal to each other
4 General
The IC to be evaluated for EMC performance is referred to as the device under test (DUT).
The DUT shall be mounted on a printed circuit board (PCB), referred to as the EMC test board.
The EMC test board is provided with the appropriate measurement or monitoring points at
which the DUT response parameters can be measured.
The EMC test board is clamped to a mating port (referred to as a wall port) cut in the top or
bottom of a transverse electromagnetic mode (TEM) cell. Either a two-port TEM cell or a one-
port TEM cell may be used. Within this standard, a two-port TEM cell is referred to as a TEM
cell while a one-port TEM cell is referred to as a wideband (Gigahertz) TEM, or GTEM, cell.

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SIST EN 62132-2:2011
62132-2 © IEC:2010 – 7 –
The test board is not positioned inside the cell, as in the conventional usage, but becomes a
part of the cell wall. This method is applicable to any TEM or GTEM cell modified to
incorporate the wall port; however, the measured response of the DUT will be affected by
many factors. The primary factor affecting the DUT’s response is the septum to EMC test
board (cell wall) spacing.
NOTE 1 This procedure was developed using a 1 GHz TEM cell with a septum to housing spacing of 45 mm and a
GTEM cell with a septum to housing spacing of 45 mm at the centre of the wall port.
The EMC test board controls the geometry and orientation of the DUT relative to the cell and
eliminates any connecting leads within the cell (these are on the backside of the board, which
is outside the cell). For the TEM cell, one of the 50 Ω ports is terminated with a 50 Ω load.
The other 50 Ω port for a TEM cell, or the single 50 Ω port for a GTEM cell, is connected to
the output of an RF disturbance generator. The injected CW disturbance signal exposes the
DUT to a plane wave electromagnetic field where the electric field component is determined
by the injected voltage and the distance between the DUT and the septum of the cell. The
relationship is given by
E = V/h
where
E is the field strength (V/m) within the cell;
V is the applied voltage (V) across the 50 Ω load; and
h is the height (m) between the septum and the centre of the IC package.
Rotating the EMC test board in the four possible orientations in the wall port of the TEM or
GTEM cell is required to determine the sensitivity of the DUT to induced magnetic fields.
Dependent upon the DUT, the response parameters of the DUT may vary (e.g. a change of
current consumption, deterioration in function performance, waveform jitter, etc.) The intent of
this test method is to provide a quantitative measure of the RF immunity of ICs for comparison
or other purposes.
NOTE 2 Additional information on the use and characterization of TEM cells for radiated immunity testing can be
found in IEC 61000-4-20.
5 Test conditions
The test conditions shall meet the requirements as described in IEC 62132-1.
6 Test equipment
6.1 General
The test equipment shall meet the requirements as described in IEC 62132-1. In addition, the
following test equipment requirements shall apply.
6.2 Cables
Double shielded or semi-rigid coaxial cable may be required depending on the local RF
ambient conditions.
6.3 RF disturbance source
The RF disturbance source may comprise an RF signal generator with a modulation function,
an RF power amplifier, and an optional variable attenuator. The gain (or attenuation) of the
RF disturbance generating equipment, without the TEM or GTEM cell, shall be known with a
tolerance of ±0,5 dB.

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SIST EN 62132-2:2011
– 8 – 62132-2 © IEC:2010
6.4 TEM cell
The TEM cell used for this test procedure is a two-port TEM waveguide and shall be fitted
with a wall port sized to mate with the EMC test board. The TEM cell shall not exhibit higher
order modes over the frequency range being measured. For this procedure, the recommended
TEM cell frequency range is 150 kHz to the frequency of the first resonance of the lowest
higher order mode (typically <2 GHz). The frequency range being evaluated shall be covered
using only a single cell.
The VSWR of the TEM cell over the frequency range being measured shall be less than 1,5.
However, due to the potential for error when calculating the applied E-field, a TEM cell with a
VSWR of less than 1,2 is preferred. A TEM cell with a VSWR less than 1,2 does not require
field strength characterization. A TEM cell with a VSWR larger than or equal to 1,2 but less
than 1,5 shall be characterized in accordance with the procedure in Annex A. The raw TEM
cell VSWR data (over the frequency range of the measurement) shall be included in the test
report. Measurement results obtained from a TEM cell with a VSWR of less than 1,2 will
prevail over data taken from a TEM cell with a higher VSWR.
6.5 Gigahertz TEM cell
The Gigahertz, or wideband, TEM (GTEM) cell used for this test procedure is a one-port TEM
waveguide and shall be fitted with a wall port sized to mate with the EMC test board. The
GTEM cell shall not exhibit higher order modes over the frequency range being measured. For
this procedure, the recommended GTEM cell frequency range is from 150 kHz to the
frequency of the first resonance of the lowest higher order mode (typically >2 GHz). The
frequency range being evaluated shall be covered using a single cell.
The VSWR of the GTEM cell over the frequency range being measured shall be less than 1,5.
However, due to the potential for error when calculating the applied E-field, a GTEM cell with
a VSWR of less than 1,2 is preferred. A GTEM cell with a VSWR less than 1,2 does not
require field strength characterization. A GTEM cell with a VSWR larger than or equal to 1,2
but less than 1,5 shall be characterized in accordance with the procedure in Annex A. The
raw GTEM cell VSWR data (over the frequency range of the measurement) shall be included
in the test report. Measurement results obtained from a GTEM cell with a VSWR of less than
1,2 will prevail over data taken from a GTEM cell with a higher VSWR.
6.6 50 Ω termination
A 50 Ω termination with a VSWR less than 1,1 and sufficient power handling capabilities over
the frequency range of measurement is required for the TEM cell measurement port not
connected to the RF disturbance generator.
6.7 DUT monitor
The performance of the DUT shall be monitored for indications of performance degradation.
The monitoring equipment shall not be adversely affected by the injected RF disturbance
signal.
7 Test set-up
7.1 General
The test set-up shall meet the requirements as described in IEC 62132-1. In addition, the
following test set-up requirements shall apply.
7.2 Test set-up details
The EMC test board shall be mounted in the wall port of the TEM cell or GTEM cell with the
DUT facing the septum as shown in Figure 1.

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SIST EN 62132-2:2011
62132-2 © IEC:2010 – 9 –
EMC test board
DUT
Cell septum
Cell housing
IEC  608/10


Figure 1 – TEM and GTEM cell cross-section
The test setup shall be as described in Figure 2 and Figure 3 for TEM cell and GTEM cell test
configurations, respectively. One of the TEM cell measurement ports shall be terminated with
a 50 Ω load. The remaining TEM cell measurement port, or the single GTEM measurement
port, shall be connected to the output port of the power amplifier.
RF disturbance source
Signal
generator
EMC test board
TEM cell
Attenuator
Power
(optional)
amplifier
50 Ω
termination
DUT monitor
IEC  609/10


Figure 2 – TEM cell test set-up

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SIST EN 62132-2:2011
– 10 – 62132-2 © IEC:2010

RF disturbance source
EMC test board
Signal
generator
Attenuator
Power
(optional)
amplifier
GTEM cell
DUT monitor
IEC  610/10


Figure 3 – GTEM cell test set-up
7.3 EMC test board
The EMC test board shall be designed in accordance with the requirements in IEC 61967-2.
8 Test procedure
8.1 General
The test procedure shall be in accordance with IEC 62132-1 except as modified herein. These
default test conditions are intended to assure a consistent test environment. The following
steps shall be performed:
a) field strength characterization (see Annex A);
b) immunity measurement (see 8.2).
If the users of this procedure agree to other conditions, these conditions shall be documented
in the test report.
8.2 Immunity measurement
8.2.1 General
With the EMC test board energized and the DUT being operated in the intended test mode,
measure the immunity to the i
...